 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| (R) STGB7NB60HD N-CHANNEL 7A - 600V DPAK PowerMESHTM IGBT TYPE STGB7NB60HD s V CES 600 V V CE(sat) < 2.8 V IC 7A s s s s s s s HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION OFF LOSSES INCLUDE TAIL CURRENT CO-PACKAGED WITH TURBOSWITCHTM ANTIPARALLEL DIODE SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") 3 1 D2PAK TO-263 (Suffix "T4") DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz). APPLICATIONS HIGH FREQUENCY MOTOR CONTROLS s SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V GE IC IC ICM (*) P tot T stg Tj Parameter Collector-Emitter Voltage (V GS = 0) Gate-Emitter Voltage Collector Current (continuous) at T c = 25 C Collector Current (continuous) at T c = 100 o C Collector Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature o o Value 600 20 14 7 56 80 0.64 -65 to 150 150 Unit V V A A A W W/ o C o o C C (*) Pulse width limited by safe operating area June 1999 1/8 STGB7NB60HD THERMAL DATA R thj-case R thj-amb R thc-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Max Max Typ 1.56 62.5 0.5 o o C/W C/W o C/W ELECTRICAL CHARACTERISTICS (Tj = 25 oC unless otherwise specified) OFF Symbol V BR(CES) I CES IGES Parameter Collector-Emitter Breakdown Voltage Collector cut-off (V GE = 0) Gate-Emitter Leakage Current (V CE = 0) Test Conditions I C = 250 A V GE = 0 T j = 25 o C T j = 125 o C V CE = 0 Min. 600 250 2000 100 Typ. Max. Unit V A A nA V CE = Max Rating V CE = Max Rating V GE = 20 V ON () Symbol V GE(th) V CE(SAT) Parameter Gate Threshold Voltage Collector-Emitter Saturation Voltage V CE = V GE V GE = 15 V V GE = 15 V Test Conditions I C = 250 A IC = 7 A IC = 7 A Min. 3 2.3 1.9 Typ. Max. 5 2.8 Unit V V V T j = 125 o C DYNAMIC Symbol gf s C ies C oes C res QG Q GE Q GC I CL Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Latching Current Test Conditions V CE =25 V V CE = 25 V IC = 7 A f = 1 MHz V GE = 0 Min. 3.5 390 45 10 Typ. 5 560 68 15 42 7.9 17.6 28 730 90 20 55 Max. Unit S pF pF pF nC nC nC A V CE = 480 V IC = 7 A V GE = 15 V V clamp = 480 V T j = 150 o C R G =10 SWITCHING ON Symbol t d(on) tr (di/dt) on Eon (r) Parameter Delay Time Rise Time Turn-on Current Slope Turn-on Switching Losses Test Conditions V CC = 480 V V GE = 15 V V CC = 480 V R G = 10 T j = 125 o C IC = 7 A R G = 10 IC = 7 A V GE = 15 V Min. Typ. 15 48 160 185 Max. Unit ns ns A/s J 2/8 STGB7NB60HD ELECTRICAL CHARACTERISTICS (continued) SWITCHING OFF Symbol tc t r (v off ) t d (off) tf E off (**) E ts(r) tc t r (v off ) t d (off) tf E off (**) E ts(r) Parameter Test Conditions IC = 7 A V GE = 15 V Min. Typ. 85 20 75 70 85 235 150 50 110 110 220 405 Max. Unit ns ns ns ns J J ns ns ns ns J J VCC = 480 V Cross-Over Time Off Voltage Rise Time R GE = 10 Delay Time Fall Time Turn-off Switching Loss Total Switching Loss VCC = 480 V Cross-Over Time Off Voltage Rise Time R GE = 10 Delay Time T j = 125 o C Fall Time Turn-off Switching Loss Total Switching Loss IC = 7 A V GE = 15 V COLLECTOR-EMITTER DIODE Symbol If I fm Vf t rr Q rr I rrm Parameter Forward Current Forward Current pulsed Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current If = 7 A If = 7 A If = 7 A dI/dt = 100 A/S T j = 125 o C V R =200 V T j = 125 o C 1.6 1.4 100 180 3.6 Test Conditions Min. Typ. Max. 7 56 2.0 Unit A A V V ns nC A (*) Pulse width limited by max. junction temperature (r) Include recovery losses on the STTA506 freewheeling diode () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (**)Losses Include Also The Tail (Jedec Standardization) Thermal Impedance 3/8 STGB7NB60HD Output Characteristics Transfer Characteristics Transconductance Collector-Emitter On Voltage vs Temperature Collector-Emitter On Voltage vs Collector Current Gate Threshold vs Temperature 4/8 STGB7NB60HD Normalized Breakdown Voltage vs Temperature Capacitance Variations Gate Charge vs Gate-Emitter Voltage Total Switching Losses vs Gate Resistance Total Switching Losses vs Temperature Total Switching Losses vs Collector Current 5/8 STGB7NB60HD Switching Off Safe Operating Area Diode Forward Voltage Fig. 1: Gate Charge test Circuit Fig. 2: Test Circuit For Inductive Load Switching Fig. 3: Switching Waveforms 6/8 STGB7NB60HD TO-263 (D2PAK) MECHANICAL DATA mm MIN. A A1 B B2 C C2 D E G L L2 L3 4.4 2.49 0.7 1.14 0.45 1.21 8.95 10 4.88 15 1.27 1.4 TYP. MAX. 4.6 2.69 0.93 1.7 0.6 1.36 9.35 10.4 5.28 15.85 1.4 1.75 MIN. 0.173 0.098 0.027 0.044 0.017 0.047 0.352 0.393 0.192 0.590 0.050 0.055 inch TYP. MAX. 0.181 0.106 0.036 0.067 0.023 0.053 0.368 0.409 0.208 0.624 0.055 0.068 DIM. D A A2 C C2 DET AIL "A" DET AIL "A" A1 B2 B E G L2 L L3 P011P6/E 7/8 STGB7NB60HD Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. 8/8 http://www.st.com . |
Price & Availability of STGB7NB60HD
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |